Photoluminescence characterization of hydrogenated nanocrystalline/ amorphous silicon

Materials Research Society Symposium Proceedings

Volumn 1153, Issue , 2009, Pages 3-8

  Fields, J D ^a   Taylor, P C ^a   Radziszewski, J G ^a   Baker, D A ^a   Yue, G ^b   Yan, B ^b  

^a Department of Metallurgical and Materials Engineering   (United States)

^b United Solar Ovanic LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; MIXTURES; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PHOTOLUMINESCENCE;

CRYSTALLIZATION TEMPERATURE; EXCITATION INTENSITY; LOW-ENERGY PEAKS; LUMINESCENCE PEAK; LUMINESCENCE SPECTRUM; NANOCRYSTALLINES; PHOTOLUMINESCENCE CHARACTERIZATION; SEQUENTIAL ANNEALING;

AMORPHOUS SILICON;

EID: 77951190921     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1153-a02-01     Document Type: Conference Paper

References (8)

1. R. A. Street, Hydrogenated Amorphous Silicon, Cambridge University Press, (1991)
2. A.U. Savchouk, S. Ostapenko, G. Nowak, J. Lagowski, and L. Jastrzebski, Appl. Phys. Lett. 67 (1) (1995)
3. S.S. Ostapenko, A.U. Savchouk, G. Nowak, J. Lagowski, and L. Jastrzebski, Mat. Sci. Forum Vols. 196-201 (1995) pp 1897-1902
4. T. Merdzhanova, R. Carius, S. Klein, F. Finger, and D. Dimova-Malinovska, Thin Solid Films, 511-512 (2006) 394-398
5. T. Muschik and R. Schwarz, J. Non-Cryst. Sol. 164-166 (1993) 619
6. M. Tajima, J. Cryst. Growth 103 (1990) 1-7
7. J.I. Pankove, Optical Processes in Semiconductors, Dover Publications, Inc.(1971)
8. A. Yamaguchi, T. Tada, K. Murayama, and T. Ninomiya, Solid State Communications, Vol.71, No.4, pp 233-236 (1989)