Heteroepitaxy and multiquantum well structure of layered compound GaSe/GaSxSe1-x on (001)GaAs substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5497-5499

  Budiman, Maman ^a   Okamoto, Tamotsu ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM SELENIDE; HETEROEPITAXY;

HETEROJUNCTIONS;

EID: 0032179685     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5497     Document Type: Article

References (5)