Cryogenic performance of a low-noise JFET-CMOS preamplifier for HPGe detectors

IEEE Transactions on Nuclear Science

Volumn 57, Issue 2 PART 2, 2010, Pages 737-742

  Pullia, Alberto ^a,b   Zocca, Francesca ^a,b   Riboldi, Stefano ^a,b   Budjáš, Dusan ^c   D'Andragora, Alessio ^d,e   Cattadori, Carla ^e,f  

^a UNIVERSITY OF MILAN   (Italy)

^b INFN SEZIONE DI MILANO   (Italy)

^c MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^d UNIVERSITY OF L'AQUILA   (Italy)

^e LABORATORI NAZIONALI DEL GRAN SASSO   (Italy)

^f INFN SEZIONE DI MILANO BICOCCA   (Italy)

Author keywords

CMOS preamplifier; Cryogenic low noise preamplifier; Gamma ray spectroscopy; Germanium detectors

Indexed keywords

CMOS PREAMPLIFIER; CRYOGENIC TEMPERATURES; GAMMA-RAY SPECTROSCOPY; GERMANIUM DETECTOR; HPGE DETECTORS; LOW NOISE; LOW NOISE PREAMPLIFIERS; LOW-POWER CONSUMPTION; MULTI-CHANNEL; P-TYPE; PHOTON INTERACTIONS; PULSE-SHAPE ANALYSIS; RISETIMES; WIDE BANDWIDTH;

CMOS INTEGRATED CIRCUITS; CRYOGENICS; DETECTORS; GAMMA RAY SPECTROMETERS; GAMMA RAYS; GERMANIUM; LIQUID NITROGEN;

AMPLIFIERS (ELECTRONIC);

EID: 77951147097     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2038697     Document Type: Article

References (11)

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