ν=5/2 fractional quantum hall effect at 10 T: Implications for the Pfaffian state

Physical Review Letters

Volumn 104, Issue 16, 2010, Pages

  Zhang, Chi ^a,b   Knuuttila, T ^a   Dai, Yanhua ^a   Du, R R ^a,b   Pfeiffer, L N ^c,d   West, K W ^c,d  

^a RICE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE AXIS; ELECTRON DENSITIES; FRACTIONAL QUANTUM HALL EFFECTS; GAAS; GAAS CRYSTALS; GAAS/ALGAAS QUANTUM WELL; HIGH-PURITY; IN-PLANE MAGNETIC FIELDS; LANDAU LEVEL FILLING FACTORS; MAGNETOTRANSPORTS; MODULATION-DOPED; PFAFFIAN; STANDARD SAMPLES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; HALL EFFECT; QUANTUM THEORY; SEMICONDUCTING GALLIUM;

MAGNETIC FIELD EFFECTS;

EID: 77951124369     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.166801     Document Type: Article

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