In situ observation of reversible nanomagnetic switching induced by electric fields

Nano Letters

Volumn 10, Issue 4, 2010, Pages 1219-1223

  Brintlinger, Todd ^a,b   Lim, Sung Hwan ^b   Baloch, Kamal H ^b,c   Alexander, Paris ^b   Qi, Yi ^b   Barry, John ^b   Melngailis, John ^b   Salamanca Riba, Lourdes ^b   Takeuchi, I ^b   Cumings, John ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c University of Maryland   (United States)

Author keywords

Domain wall; In situ; Lorentz; Magnetoelectric; Multiferroic

Indexed keywords

APPLIED ELECTRIC FIELD; BI-LAYER STRUCTURE; COERCIVE FIELD; DIRECT OBSERVATION; DOMAIN WALL MOTION; GROWTH SUBSTRATES; IN-SITU; IN-SITU OBSERVATIONS; LORENTZ; LORENTZ MICROSCOPIES; MAGNETIC ORDERING; MAGNETOELECTRIC; MEMORY NODES; MICROMAGNETIC MODELING; MULTIFERROICS; REVERSIBLE SWITCHING; SIMULATION-BASED; UNIAXIAL ANISOTROPY;

ANISOTROPY; BARIUM COMPOUNDS; COMPOSITE MICROMECHANICS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTROMECHANICAL DEVICES; GALLIUM;

MAGNETIC DOMAINS;

NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; INSTRUMENTATION; MAGNETISM; METHODOLOGY; NANOTECHNOLOGY;

ELECTROMAGNETIC FIELDS; MAGNETICS; NANOPARTICLES; NANOTECHNOLOGY;

EID: 77951085294     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl9036406     Document Type: Article

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