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Volumn , Issue , 2009, Pages 196-198

CMOS compatible contacts and etching for InP-on-silicon active devices

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CMOS COMPATIBLE; CONTINUOUS WAVE; ETCHED FACET; INP; NONALLOYED OHMIC CONTACT;

EID: 77951076124     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2009.5338397     Document Type: Conference Paper
Times cited : (19)

References (7)
  • 5
    • 33749354397 scopus 로고    scopus 로고
    • Optimization of a C12-H2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures
    • S. Guilet, S. Bouchoule et al., "Optimization of a C12-H2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures," J. Vac. Sci. Technol. B, vo.1.24 no5, pp. 2381-2387, 2006.
    • (2006) J. Vac. Sci. Technol. B,. , vol.24 , Issue.5 , pp. 2381-2387
    • Guilet, S.1    Bouchoule, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.