RF power potential of 45 nm CMOS technology

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Volumn , Issue , 2010, Pages 204-207

  Gogineni, Usha ^a   Del Alamo, Jesús A ^a   Putnam, Christopher ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

65-NM DEVICES; CMOS DEVICES; CMOS TECHNOLOGY; MAXIMUM OSCILLATION FREQUENCY; OPERATING FREQUENCY; PEAK OUTPUT POWER; PEAK POWER; RF POWER PERFORMANCE; RF-POWER;

INTEGRATED CIRCUITS; RADIOFREQUENCY SPECTROSCOPY;

CMOS INTEGRATED CIRCUITS;

EID: 77951048141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2010.5422960     Document Type: Conference Paper

References (8)

1. W.L. Chan et al, "A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS", International Solid State Circuits Conference, 2009, pp. 380-381.
2. A. Valdes-Garcia et al, "60 GHz transmitter circuits in 65nm CMOS", Radio Frequency Integrated Circuits Symposium, 2008, pp. 641-644.
3. K. Raczkowski, et al, "50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS", International Solid State Circuits Conference, 2009, pp. 382-384.
4. E. Cohen, et al, "60GHz 45nm PA for Linear OFDM Signal with Predistortion Correction achieving 6.1% PAE and -28dB EVM", Radio Frequency Integrated Circuits Symposium, 2009, pp. 35-38.
5. J. Yuan, et al, "A 45nm low cost low power platform by using integrated dual-stress-liner technology", VLSI technology symposium, 2006, pp. 100-101.
6. U. Gogineni, et al, "Effect of substrate contact shape and placement on RF characteristics of 45 nm low-power CMOS devices", Radio Frequency Integrated Circuits Symposium, 2009, pp. 163-166.
7. Z. Luo, et al, "High performance and low power transistors integrated in 65nm bulk CMOS technology", International Electron Device Meeting, 2004, pp. 661-664. (Pubitemid 40928379)
8. J. Scholvin, et al, "Fundamental power and frequency limits of deeply-scaled CMOS for RF power applications", International Electron Device Meeting, 2006, pp. 217-220.