High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 657-660

  Schulze, T F ^a   Korte, L ^a   Conrad, E ^a   Schmidt, M ^a   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AFORS-HET; CURRENT VOLTAGE CURVE; DARK I-V CURVE; DOPED STRUCTURES; FITTING RESULTS; FORWARD BIAS; HETEROJUNCTION SOLAR CELLS; I - V CURVE; IDEALITY FACTORS; NUMERICAL SIMULATION; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSPORT MECHANISM; TWO-DIODE MODEL; ZNO;

COMPUTER SIMULATION; CURVE FITTING; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PHOTOELECTRON SPECTROSCOPY; SOLAR CELLS; ZINC OXIDE;

SILICON;

EID: 77950993500     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982747     Document Type: Article

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