Dense array of quantum dot in Ge/Si nanostructures: Strain induced control of electron energy spectrum and optical transitions

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Volumn , Issue , 2009, Pages 210-213

  Dvurechenskii, Anatoliy ^a   Yakimov, Andrew ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Energy spectrum; Germanium; Quantum dots; Silicon; Strain

Indexed keywords

ANTIBONDING ORBITAL; DENSE ARRAYS; DINGER EQUATION; ELECTRON BINDING ENERGY; ELECTRON ENERGY SPECTRUM; ELECTRONIC ENERGY LEVELS; ENERGY SPECTRA; GE ISLAND; GE QUANTUM DOT; GERMANIUM QUANTUM DOTS; HOLE ENERGY; HOLE ENERGY LEVEL; INHOMOGENEOUS STRAIN FIELDS; INTERATOMIC POTENTIAL; NEAREST NEIGHBORS; OPTICAL INTERBAND TRANSITIONS; OSCILLATOR STRENGTHS; POTENTIAL WELLS; QUANTUM DOT; QUANTUM DOTS; SINGLE-PARTICLE; SPACE CHARGES; TIGHT BINDING; VERTICAL STACKING;

ELECTRON ENERGY LEVELS; ELECTRON SPIN RESONANCE SPECTROSCOPY; GERMANIUM; NANOTECHNOLOGY; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; THREE DIMENSIONAL;

BINDING ENERGY;

EID: 77950988529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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