Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 691-694

  Johnson, E V ^a   Dadouche, F ^b   Gueunier Farret, M E ^b   Kleider, J P ^b   Roca i Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AFORS-HET; DOPING EFFICIENCY; DOPING LEVELS; HEAVILY DOPED; I-LAYER; IN-SITU; INTENSITY MEASUREMENTS; LIGHT SOAKING; LOW RATES; NUMERICAL MODELLING; P-LAYER; POLYMORPHOUS SILICON; THREE PARAMETERS; VARYING LIGHTS;

ELECTRIC REACTORS; EPITAXIAL GROWTH; OPEN CIRCUIT VOLTAGE; SILICON COMPOUNDS; SOLAR CELLS;

DOPING (ADDITIVES);

EID: 77950987685     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982723     Document Type: Article

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