Thermal characteristics of 3kV, 600A 4H-SiC flat-package pn diodes

Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)

Volumn 171, Issue 4, 2010, Pages 1-7

  Ogata, Syuji ^a   Takayama, Daisuke ^a   Asano, Katsunori ^a   Sugawara, Yoshitaka ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

Flat package; Pn diode; SiC

Indexed keywords

A-THERMAL; CHIP AREAS; DIODE CHIPS; ELECTRICITY SUPPLY; HIGH TEMPERATURE; P-N DIODE; PRESSURE CONTACTS; PULSE LOADS; SIC DIODES; THERMAL CHARACTERISTICS; THERMAL IMPEDANCE; THERMAL RESISTANCE;

DIODES; PACKAGING; SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950925103     PISSN: 04247760     EISSN: 15206416     Source Type: Journal    
DOI: 10.1002/eej.20978     Document Type: Article

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