MOSFET modeling adapted for switched applications using a state-space approach and internal capacitance characterization

Proceedings of the International Conference on Power Electronics and Drive Systems

Volumn , Issue , 2009, Pages 1107-1112

  Karvonen, Andreas ^a   Thiringer, Torbjörn ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Component; MOSFET switches; Semiconductor device measurements; Semiconductor device modeling; State space methods

Indexed keywords

CONTROLLER DESIGNS; DISCRETE ELEMENTS; EXTERNAL VOLTAGES; GATE-DRAIN CAPACITANCE; IMPEDANCE MEASUREMENT; INTERNAL CAPACITANCE; MOSFET MODELING; MOSFET SWITCHES; NEW APPROACHES; SEMICONDUCTOR DEVICE MEASUREMENTS; SEMICONDUCTOR DEVICE MODELING; SIMULATIONS AND MEASUREMENTS; STATE SPACE APPROACH; STATE SPACE IMPLEMENTATION; STATE-SPACE TECHNIQUE; SWITCHING CHARACTERISTICS;

CAPACITANCE; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; STATE SPACE METHODS;

MOSFET DEVICES;

EID: 77950873951     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PEDS.2009.5385798     Document Type: Conference Paper

References (16)

1. A. Karvonen, "MOSFET Modeling Aimed at Minimizing EMI in Switched DC/DC Converters Using Active Gate Control," Licentiate Thesis at Department of Energy and Environment, Division of Electric Power Engineering: Chalmers University of Technology, Gothenburg, Sweden, 2009, p. 165.
2. H. Chung-Wen, A. Ruehli, and P. Brennan, "The modified nodal approach to network analysis," Circuits and Systems, IEEE Transactions on, vol. 22, no. 6, pp. 504-509, 1975, 0098-4094.
3. L. M. Wedepohl and L. Jackson, "Modified nodal analysis: an essential addition to electrical circuit theory and analysis," Engineering Science and Education Journal, vol. 11, no. 3, pp. 84-92, 2002, 0963-7346. (Pubitemid 34732013)
4. G. Massobrio and P. Antognetti, Semiconductor Device Modeling With Spice. McGraw-Hill Professional, 1993.
5. S. Linder, Power Semiconductors. EFPL Press, 2006.
6. G. Verneau, L. Aubard, J. C. Crebier, C. Schaeffer, and J. L. Schanen, "Empirical power MOSFET modeling: practical characterization and simulation implantation," vol. 4, 2002, pp. 2425-2432 vol.4.
7. Ned Mohan, Tore Undeland, William Robbins, Power Electronics: Converters, Applications and Design, 2 nd Edition, John Wiley & Sons Inc., ISBN 0-471-58408-8
8. Y. Lembeye, J. L. Schanen, and J. P. Keradec, "Experimental characterization of insulated gate power components: capacitive aspects," in Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE, vol. 2, 1997, pp. 983-988 vol.2.
9. C. Deml, "Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow," in Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE, vol. 2, 1999, pp. 1093-1097 vol.2. (Pubitemid 30544104)
10. C. Deml and K. Hoffmann, "Gate-drain capacitance behaviour of the DMOS power transistor under high current flow," in Power Electronics Specialists Conference. 1998. PESC 98 Record. 29th Annual IEEE, vol. 2, 1998, pp. 1716-1719 vol.2.
11. D. Li and P. Mazumder, "Accurate estimating simultaneous switching noises by using application specific device modeling," in Design, Automation and Test in Europe Conference and Exhibition, 2002. Proceedings, 2002, pp. 1038-1043.
12. R. P. Frey, "Advanced Power Technology Aplication Note APT0001 - High Voltage, High Efficiency MOSFET RF Amplifiers - Design Procedure and Examples," Tech. Rep.
13. K. Xing, F. C. Lee, and D. Boroyevich, "Extraction of parasitics within wire-bond IGBT modules," in Applied Power Electronics Conference and Exposition, 1998. APEC '98. Conference Proceedings 1998., Thirteenth Annual, vol. 1, 1998, pp. 497-503 vol.1.
14. V. Benda, J. Gowar, and D. A. Grant, Power semiconductor devices: Theory and Applications. Chichester, England: John Wiley and Sons Ltd., 1999.
15. "International Rectifier IRF520N HEXFET Power MOSFET Datasheet, PD - 91339A," 1998, [Accessed 2009-01-27]. Available: http://www.irf.com/ product-info/datasheets/data/irf520n.pdf
16. "Application Note AN-957 - Measuring HEXFET MOSFET Characteristics," International Rectifier Inc., Application Note.