Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation

Chemical Physics Letters

Volumn 490, Issue 4-6, 2010, Pages 194-199

  Danos, Lefteris ^a   Markvart, Tomas ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AGGREGATE FORMATION; CLOSE DISTANCE; COMPETING PROCESS; DECAY CURVES; ENERGY-TRANSFER RATE; INTERLAYER ENERGY TRANSFER; LANGMUIR-BLODGETT; SILICON SURFACES; TIME-RESOLVED EMISSION SPECTRA;

ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; MONOLAYERS; MONOMERS; OLIGOMERS; STEARIC ACID;

ENERGY TRANSFER;

EID: 77950862753     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.03.045     Document Type: Article

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