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Volumn 18, Issue 1 PART 2, 2009, Pages 1049-1058

Performance limitations of mc-Si solar cells caused by defect clusters

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; CHARACTERISTICS OF DEFECT; DEFECT CLUSTER; EFFICIENCY LOSS; MULTICRYSTALLINE SILICON WAFERS; PERCENTAGE POINTS; PERFORMANCE LIMITATIONS; SI SOLAR CELLS; SOLAR CELL PROCESSING; SPECIFIC ORIENTATION;

EID: 77950683796     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3096571     Document Type: Conference Paper
Times cited : (18)

References (9)
  • 3
    • 77950649092 scopus 로고    scopus 로고
    • PVSCAN uses optical scattering from a defect-etched wafer to statistically count defects. It is also fitted with capabilities to make LBIC and reflectance measurements at 0.63 and 0.98 μm
    • It is available from GT Solar Technologies, Nashua, NH 03054. Also see B.L. Sopori, U.S. Patent 5,581,346.
    • PVSCAN uses optical scattering from a defect-etched wafer to statistically count defects. It is also fitted with capabilities to make LBIC and reflectance measurements at 0.63 and 0.98 μm. It is available from GT Solar Technologies, Nashua, NH 03054. Also see B.L. Sopori, U.S. Patent 5,581,346.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.