Ultra-high removal rate copper CMP slurry development for 3D application

ECS Transactions

Volumn 18, Issue 1 PART 1, 2009, Pages 479-484

  Hu, B ^a   Kim, H ^a   Wen, R ^a   Mahulikar, D ^b  

^a Planar Solutions LLC   (United States)

^b Planar Solutions LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D APPLICATION; 3D PACKAGING; 3D STRUCTURE; CHEMICAL-MECHANICAL PLANARIZATION; CMP PROCESS; CMP SLURRY; COLLOIDAL SILICA; COPPER CMP; CU LAYERS; CU LINES; HIGH REMOVAL RATES; IC MANUFACTURING; PLANARIZATION EFFICIENCIES; REMOVAL RATE; THICK OVERBURDEN; THROUGH SILICON VIAS; ULTRA-HIGH;

FILLED POLYMERS; GRINDING (MACHINING); INTEGRATED CIRCUITS; SILICA; THREE DIMENSIONAL;

NANOTECHNOLOGY;

EID: 77950678512     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3096489     Document Type: Conference Paper

References (8)

1. J. M. Steigerwald, S. P. Murarka, and R. J. Gutman, Chemical Mechanical Planarization of Microelectronic Materials, p. 15, John Wiley & Sons, New York (1997).
2. T. Tucker, Chemical-Mechanical Planarization of Semiconductor Materials, M. R. Oliver (Ed.), p. 137, Springer-Verlag, Berlin (2004).
3. T. Tessler, in 3rd IC Packaging Technology Exposition and Conference, Japan (2002).
4. S. L. Burkett, X. Qiao, D. Temple, B. Stoner, and G. McGuire, J. Vac. Sci. Technol.B, 22, 248 (2004).
5. B. Mravic, D. Mahulikar, US Patent 6083840A
6. D. Mahulikar, R. Wen and B. Hu, Specialty Chemicals Magazine, March, 25(3), 2 (2005).
7. B. Hu, R. Wen, H. Kim and D. Mahulikar, "High Removal Rate Copper CMP Slurry Development"; ICPT 2008, Taiwan, (2008)
8. R. Wen, et al.; Lake Placid CMP conference proceedings, Lake Placid, NY (2005).