Gas sensing with self-assembled monolayer field-effect transistors

Organic Electronics

Volumn 11, Issue 5, 2010, Pages 895-898

  Andringa, Anne Marije ^a,b   Spijkman, Mark Jan ^a,b   Smits, Edsger C P ^c   Mathijssen, Simon G J ^b,d   Hal, Paul A van ^b   Setayesh, Sepas ^b   Willard, Nico P ^b   Borshchev, Oleg V ^e   Ponomarenko, Sergei A ^e   Blom, Paul W M ^a,c   de Leeuw, Dago M ^a,b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e ENIKOLOPOV INSTITUTE OF SYNTHETIC POLYMER MATERIALS   (Russian Federation)

Author keywords

Gas sensor; Nitric oxide; Porphyrin; Self assembled monolayer field effect transistor

Indexed keywords

CHEMICAL SENSORS; GAS DETECTORS; GAS SENSING ELECTRODES; NITRIC OXIDE; PORPHYRINS; SELF ASSEMBLED MONOLAYERS; THRESHOLD VOLTAGE;

ACTIVE CHANNELS; GAS SENSING; HIGH SENSITIVITY; IRON PORPHYRIN; NO CONCENTRATION; POSITIVE GATE BIAS; SENSOR RESPONSE; THRESHOLD VOLTAGE SHIFTS;

FIELD EFFECT TRANSISTORS;

EID: 77950594689     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.02.007     Document Type: Article

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