Vacancies and vacancy defects in Si observed by positron annihilation

Defect and Diffusion Forum

Volumn 153-155, Issue , 1998, Pages 97-110

  Hautojarvi P ^a   Saarinen, K ^a   Makinen J ^a   Corbel, C ^b  

^a AALTO UNIVERSITY   (Finland)

^b CEA SACLAY   (France)

Author keywords

Diffusion; Divacancy; Donor; Electron Irradiation; Electron Paramagnetic Resonance; Hydrogen Implantation; Oxygen; Positron Annihilation; Silicon; Vacancy

Indexed keywords

ANTIMONY COMPOUNDS; DEFECTS; DIFFUSION; DOPING (ADDITIVES); ELECTRON IRRADIATION; ELECTRONS; OXYGEN; PARAMAGNETIC RESONANCE; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SILICON;

DIVACANCIES; DONOR; HYDROGEN IMPLANTATION; POSITRON LIFETIME; RECOMBINATION CENTERS; THERMAL EQUILIBRIUMS; VACANCY CONCENTRATION; VOLUME RELAXATION;

VACANCIES;

EID: 77950553473     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.153-155.97     Document Type: Article

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