Determination of plasma frequency and the pulse relaxation time in doped semiconductors by FIR surface waves

International Journal of Infrared and Millimeter Waves

Volumn 20, Issue 3, 1999, Pages 439-445

  Vaicikauskas, V ^a   Antanavicius, R ^a   Januskevicius, R ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

A3B5 semiconductors; Plasma frequency; Surface plasmons

Indexed keywords

ELECTRON SCATTERING; SEMICONDUCTOR DOPING; SURFACE WAVES;

SURFACE ELECTROMAGNETIC WAVE METHOD;

WAVE PLASMA INTERACTIONS;

EID: 0033097343     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021765415328     Document Type: Article

References (4)

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3. V. Vaicikauskas.Infrared Physics and Technology. 36, 475 (1995).
4. N.A. Semikolenova.Fizika Tverdogo Tela.22, 137 (1988).