Formation of GaN nanocrystal on Si and its photoelectrochemical application

Materials Research Society Symposium Proceedings

Volumn 1127, Issue , 2008, Pages 73-78

  Fujii, Katsushi ^a   Kato, Takashi ^a   Sato, Keiichi ^a   Im, In Ho ^a   Chang, Ji Ho ^b   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Korea Maritime University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; III-V SEMICONDUCTORS; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANODOTS; NANORODS; NANOSTRUCTURED MATERIALS; ORGANOMETALLICS; PHOTOCURRENTS; SILICON;

GAN NANORODS; LAYER STRUCTURES; METAL-ORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURE SIZE; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICAL PERFORMANCE; SI(111) SUBSTRATE;

GALLIUM NITRIDE;

EID: 77950465468     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1127-t04-01     Document Type: Conference Paper

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