High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40 Gbit/s transmission systems

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 1, Issue , 2004, Pages 518-520

  Yasuoka, Nami ^a   Kuwatsuka, Haruhiko ^a   Kuramata, Akito ^a   Uchida, Toru ^a   Yoneda, Yoshihiro ^a   Nakai, Saburou ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

40 GBIT/S TRANSMISSION; 40-GBIT/S; HIGH-SPEED; INP/INGAAS; NRZ SIGNALS;

WAVEGUIDES;

AVALANCHE PHOTODIODES;

EID: 77950426454     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y. Oikawa, H. Kuwatsuka, T. Yamamoto, T. Ihara, H. Hamano, and T. Minami, "Packaging technology for a 10-Gb/s photorcceiver module," J. Lightwave Techno!., 11,343-352, (1994)
2. Y. Kito, H. Kuwatsuka, T, Kuroai, M. Makiuchi, T. Uchida, O. Wada, and M. Mikawa, "High-Speed Flip-Chip InP/InGaAs Avalanche Photodiode with Ultralow Capacitance and Large Gain-Bandwidth Products," IEEE Photon. Technol. Lett, 3,1115-1116 (1991)
3. T, Nakata, T. Takeuchi, K. Makita, Y. Amamiya, T. Kato, Y. Sizuki, and T. Torikai, "High-sensitivity 40-Gb/s receiver with a wideband InAlAs waveguide avalanche photodiode," Proc. of ECOC'02, Paper No. 10. 5.1 (2002)
4. th Annual Meeting of the IEEE Lasers and Electron-Optical Society (LEOS), ThZ 5 (2003)