Short-circuit capability of SiC buried-gate static induction transistors: Basic mechanism and impacts of channel width on short-circuit performance

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 919-927

  Yano, Koji ^a   Tanaka, Yasunori ^b   Yatsuo, Tsutomu ^b   Takatsuka, Akio ^b   Arai, Kazuo ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Device simulation; Power devices; Short circuit operation; Static induction transistors (SITs); Unipolar devices

Indexed keywords

CIRCUIT OPERATION; DEVICE SIMULATIONS; POWER DEVICES; STATIC INDUCTION TRANSISTORS; UNIPOLAR DEVICES;

BIPOLAR TRANSISTORS; SILICON CARBIDE;

ELECTRIC EQUIPMENT;

EID: 77950300737     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2040665     Document Type: Article

References (12)

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