Aluminum nitride as a high temperature transducer

AIP Conference Proceedings

Volumn 1211, Issue , 2010, Pages 1029-1034

  Parks, D A ^a   Tittmann, B R ^a   Kropf, M M ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Aluminum nitride; High temperature; Piezoelectric; Transducer

Indexed keywords

EID: 77950170692     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3362142     Document Type: Conference Paper

References (4)

1. Lev Isaakovich Berger. "Semiconductor Materials". CRC Press. 1996.
2. Farell et al. "High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films". Mater. Res. Soc. Symp. Proc. Vol. 1052 © 2008 Materials Research Society. 2008.
3. Elmazaria et al. "Electrical properties of piezoelectric aluminium nitride films deposited by reactive dc magnetron sputtering". phys. stat. sol. (a) 196, No. 2, 416-421 (2003) / DOI 10.1002/pssa.200306446.
4. Patel et al. "High Frequency High Temperature Ultrasonic Transducers". NDT International Volume 23 Number 5 October 1990.