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Volumn 1052, Issue , 2008, Pages 191-195
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High temperature annealing studies on the piezoelectric properties of thin aluminum nitride films
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE (AIN TIN);
ALUMINUM NITRIDE (AIN) FILMS;
AMBIENT ENVIRONMENTS;
ANNEALING TEMPERATURE (TA);
ENERGY DISPERSIVE X RAY ANALYSIS (EDAX);
HIGH-TEMPERATURE ANNEALING;
LASER DOPPLER VIBROMETRY (LDV);
METAL ORGANIC VAPOR PHASE EPITAXY (MOVPE);
MICRO-ELECTRO- MECHANICAL SYSTEM (MEMS);
PIEZOELECTRIC COEFFICIENTS;
PIEZOELECTRIC PROPERTIES;
RAPID THERMAL ANNEALING (RTA);
ALUMINUM;
ALUMINUM COMPOUNDS;
ALUMINUM METALLOGRAPHY;
ANNEALING;
COMPOSITE MICROMECHANICS;
COMPUTER NETWORKS;
CRYSTAL GROWTH;
CUBIC BORON NITRIDE;
ELECTROCHEMICAL SENSORS;
ELECTROMECHANICAL DEVICES;
EPITAXIAL GROWTH;
LASER DOPPLER VELOCIMETERS;
LIGHT METALS;
MECHATRONICS;
MEMS;
METAL ANALYSIS;
MICROELECTROMECHANICAL DEVICES;
MICROFLUIDICS;
MICROMECHANICS;
MOLECULAR BEAM EPITAXY;
NITRIDES;
ORGANOMETALLICS;
PIEZOELECTRICITY;
PIGMENTS;
PULSED LASER DEPOSITION;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
STEEL ANALYSIS;
THICK FILMS;
THIN FILMS;
X RAY ANALYSIS;
X RAY FILMS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 45749088933
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (16)
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References (5)
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