On the discovery of a polarity-dependent memory switch and/or memristor (Memory resistor)

IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)

Volumn 27, Issue 2, 2010, Pages 179-180

  Chandra, Suresh ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CDS; ELECTRON TRANSPORT; ION MOTIONS; MEMORY SWITCHING; MEMRISTOR; NANO-TIO;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; DATA STORAGE EQUIPMENT; DOPING (ADDITIVES); SWITCHING SYSTEMS;

LEAD;

EID: 77949897610     PISSN: 02564602     EISSN: 09745971     Source Type: Journal    
DOI: 10.4103/0256-4602.60170     Document Type: Article

References (5)

1. M.J. Kumar. "Memristor-Why do we have to know about it". IETE Technical Review, vol.26, pp. 3-6, 2009.
2. L.O. Chua. "Memristor- The Missing Circuit Element". IEEE Transaction on Circuit Theory. vol.18, pp. 507-519, 1971.
3. D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams. "The Missing Memristor found". Nature, vol.453, pp. 80-83, 2008.
4. H.M. Upadhyaya, and S. Chandra. "Polarity dependent memory switching behaviour in Ti/CdxPb1-xS/Ag system" Semiconductor Science and Technology, vol.10, pp. 332-338, 1995.
5. H.M. Upadhyaya, D.P. Singh, and S. Chandra. "Memory Switching in Ti/CdxPb1-x S/Ag due to Pb21 motion" In: Chowdari B.V., Chandra S., Singh S., and Srivastava P.C., editors. "Solid State Ionics: Materials and Applications" World Scientific, Singapore; 1992.