Carbon nanotube-Si diode as a detector of mid-infrared illumination

Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

  Ong, Pang Leen ^a   Euler, William B ^b   Levitsky, Igor A ^a,b  

^a Emitech Inc   (United States)

^b University of Rhode Island   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; BAND GAP ENERGY; CHARGE SEPARATIONS; FAST RESPONSE TIME; INFRARED LIGHT; MID-INFRARED PHOTODETECTORS; MIDINFRARED; MULTIWALL NANOTUBES; PHOTOCURRENT RESPONSE; PHOTOCURRENT SPECTRUM; PHOTON ABSORPTIONS; PRIMARY MECHANISM; ROOM TEMPERATURE; SILICON HETEROJUNCTIONS; SPECTRAL RANGE; TEMPERATURE CHANGES;

CARBON NANOTUBES; HETEROJUNCTIONS; INFRARED DETECTORS; INFRARED SPECTROSCOPY; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SEMICONDUCTING SILICON COMPOUNDS;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 77949851087     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3279141     Document Type: Article

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