Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells

Current Applied Physics

Volumn 10, Issue 2 SUPPL., 2010, Pages

  Cho, Sung Bin ^a   Hong, Kyoung Kook ^a   Huh, Joo Youl ^a   Park, Hyun Jung ^b   Jeong, Ji Weon ^b  

^a Korea University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

Ag thick film metallization; Glass frit; Interfacial reaction; Oxygen partial pressure; Silicon solar cell

Indexed keywords

AG CONTACTS; AMBIENT OXYGEN; CRYSTALLINE SI; CRYSTALLINE SILICON SOLAR CELLS; GLASS FRIT; INTERFACIAL REACTIONS; OXYGEN PARTIAL PRESSURE; SI WAFER; SINTERING BEHAVIORS; THICK-FILM CONTACT;

CRYSTALLITES; DISSOLUTION; FLUIDIZATION; GLASS; LEAD OXIDE; METALLIZING; ORGANIC POLYMERS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; REDOX REACTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SINTERING; SOLAR CELLS;

SILVER;

EID: 77949772041     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.11.054     Document Type: Article

References (6)

1. Schubert G., Huster F., and Fath P. Sol. Energ. Mater. Sol. Cells 90 (2006) 3399-3406
2. Hilali M.M., Srindharan S., Khadilkar C., Shaikh A., Rohatgi A., and Kim S. J. Electron. Mater. 35 (2006) 2041-2047
3. G. Schubert, F. Huster, P. Fath, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, 2004, pp. 813-816.
4. Ballif C., Huljic D.M., Willeke G., and Hessler-Wyser A. Appl. Phys. Lett. 82 (2003) 1878-1880
5. Kim K., Dhungel S.K., Gangopadhyay U., Yoo J., Seok C.W., and Yi J. Thin Solid Films 511 (2006) 228-234
6. Hong K.K., Cho S.B., Huh J.Y., Park H.J., and Jeong J.W. Met. Mater. Int. 15 (2009) 307-312