Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47 As/InP quantum well structure: Weak antilocalization and beating pattern

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Zhou, Y M ^a   Yu, G ^a   Wei, L M ^a   Gao, K H ^a   Zhou, W Z ^a,b   Lin, T ^a   Shang, L Y ^a   Guo, S L ^a   Chu, J H ^a   Dai, N ^a   Austing, D G ^c  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b GUANGXI UNIVERSITY   (China)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE G-FACTOR; ELECTRON DENSITIES; EXPERIMENTAL APPROACHES; GATE VOLTAGES; HIGH MOBILITY; NONMONOTONIC BEHAVIORS; QUANTUM WELL; QUANTUM WELL STRUCTURES; RASHBA COUPLING; SHUBNIKOV-DE HAAS OSCILLATIONS; SPIN ORBIT INTERACTIONS; WEAK ANTILOCALIZATION; ZERO-FIELD SPIN SPLITTING;

ELECTRON GAS; ELECTRONS; GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77949662757     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309786     Document Type: Article

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