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Volumn 94, Issue 5, 2010, Pages 830-835

Modeling, geometric optimization and isolation of the edge region in silicon solar cells

Author keywords

Analytical modeling; Edge isolation; Laser; Resistance limited enhanced recombination; Simulation; Solar cell

Indexed keywords

ANALYTICAL MODELING; CELL PERFORMANCE; COUPLED DEFECTS; DEPLETION REGION; EDGE DESIGNS; EDGE ISOLATION; EDGE REGION; EQUIVALENT CIRCUIT MODEL; EXPERIMENTAL DATA; GEOMETRIC OPTIMIZATION; GEOMETRICAL GRIDS; GEOMETRICAL OPTIMIZATION; I - V CURVE; IDEALITY FACTORS; LASER RESISTANCE; LOSS MECHANISMS; NUMERICAL SIMULATION; SATURATION CURRENT; SHOCKLEY-READ-HALL RECOMBINATIONS;

EID: 77949654913     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.12.033     Document Type: Article
Times cited : (16)

References (10)
  • 7
    • 77949654089 scopus 로고    scopus 로고
    • Ph.D. Thesis, University of New South Wales
    • K.R. McIntosh, Ph.D. Thesis, University of New South Wales, 2001.
    • (2001)
    • McIntosh, K.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.