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Volumn 20, Issue 4, 2010, Pages 798-805
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Triptycene derivatives as high-Tg host materials for various electrophosphorescent devices
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Author keywords
[No Author keywords available]
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Indexed keywords
CO-HOST;
CURRENT DENSITY-VOLTAGE CHARACTERISTICS;
CURRENT EFFICIENCY;
DRIVING VOLTAGES;
ELECTRON TRANSPORT;
ELECTROPHOSPHORESCENT DEVICES;
EXTERNAL QUANTUM EFFICIENCY;
GLASS TRANSITION TEMPERATURE;
HIGH BRIGHTNESS;
HIGH-T;
HOLE TRANSPORTS;
HOST MATERIALS;
NORMAL OPERATIONS;
POWER EFFICIENCY;
RED ELECTROPHOSPHORESCENCE;
TRIPLET ENERGY;
TRIPTYCENES;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON TRANSITIONS;
ELECTRON TRANSPORT PROPERTIES;
GLASS TRANSITION;
IRIDIUM;
IRIDIUM COMPOUNDS;
OPTOELECTRONIC DEVICES;
PHOSPHORESCENCE;
SEMICONDUCTOR QUANTUM DOTS;
QUANTUM EFFICIENCY;
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EID: 77949572408
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/b918188a Document Type: Article |
Times cited : (32)
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References (32)
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