Effect of incident angle of target molecules on electrical property of Al-doped ZnO thin films prepared by RF magnetron sputtering

Current Applied Physics

Volumn 10, Issue 2 SUPPL., 2010, Pages

  Lee, Sang Hwan ^a   Jung, Jae Hak ^a   Kim, Soo Hyun ^a   Lee, Do Kyung ^b   Jeon, Chan Wook ^a  

^a Yeungnam University   (South Korea)

^b Gumi Electronics and Information Technology Research Institute (GERI)   (South Korea)

Author keywords

Incident angle; Magnetron sputtering; Off axis; ZnO

Indexed keywords

AL-DOPED ZNO; CRYSTAL PLANES; DOPED ZNO; ELECTRICAL CONDUCTANCE; ELECTRICAL PROPERTY; FILM RESISTIVITY; INCIDENT ANGLE; INCIDENT ANGLES; OFF-AXIS; PREFERRED ORIENTATIONS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SPUTTERED PARTICLES; SURFACE NORMALS; TARGET MOLECULE; ZNO;

ALUMINUM; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; TARGETS; THIN FILMS; ZINC OXIDE;

FILM PREPARATION;

EID: 77949569231     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.04.021     Document Type: Article

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