Strain-compensated InGaAs/InAlAs quantum cascade detector of 4.5 μm operating at room temperature

Chinese Physics Letters

Volumn 27, Issue 3, 2010, Pages

  Kong, Ning ^a   Liu, Jun Qi ^a   Li, Lu ^a   Liu, Feng Qi ^a   Wang, Li Jun ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON TRANSFER; INGAAS/INALAS; INTERSUBBAND TRANSITIONS; LONGITUDINAL OPTICAL PHONONS; PHOTOVOLTAICS; QUANTUM CASCADE DETECTORS; QUANTUM LEVELS; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAIN-COMPENSATED; STRUCTURE DESIGN;

MOLECULAR BEAM EPITAXY;

EID: 77949407381     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/3/038501     Document Type: Article

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