W-band SiGe LNA using unilateral gain peaking

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 289-292

  Alvarado Jr , Javier ^a,b,c   Kornegay, Kevin T ^a,c   Welch, Brian P ^a   Wang, Yanxin W ^a  

^a Cornell University ^*  (United States)

^b RAYTHEON COMPANY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Low noise amplifier (LNA); Millimeter wave bipolar integrated circuits; Monolithic; Noise figure; SiGe; W band; Wideband amplifier

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; ELECTRIC POWER UTILIZATION; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVES; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

LOW-NOISE AMPLIFIER (LNA); MILLIMETER-WAVE BIPOLAR INTEGRATED CIRCUITS; MONOLITHIC; SIGE; W-BAND; WIDEBAND AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 57349128430     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633160     Document Type: Conference Paper

References (5)

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2. J. Alvarado Jr. et al, "60-GHz LNA using a Hybrid Transmission Line and Conductive Path to Ground Technique in Silicon," IEEE Radio Frequency Integrated Circuits Conference, June 2007.
3. M. S. Gupta, "Power Gain in Feedback Amplifiers, a Classic Revisted," IEEE, Transactions on Microwave Theory and Techniques, Vol. 40, No. 5, May 1992.
4. S. J. Mason, "Power Gain in Feedback Amplifiers," Trans. IRE Profession Group on Circuit Theory, Vol. CT-1, no.2, pp. 20-25, June 1954.
5. B. Heydari et al, "Low-Power mm-Wave Components up to 104 GHz in 90nm CMOS," IEEE ISSC, pp. 200, 201, 597 Feb. 2007.