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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 8, 2008, Pages 1872-1875

Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN

(9) Kammermeier, T a Dhar, S a,b Ney, V a Manuel, E a Ney, A a Ploog, K H b Lo, F Y c Melnikov, A c Wieck, A D c

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

c RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE MAGNETIC SEMICONDUCTORS; IMPLANTED SAMPLES; LINE WIDTHS; MOLECULAR-BEAM EPITAXIES; NITROGEN DONORS; POLARIZED SPHERES; RESONANCE FIELDS; ROOM TEMPERATURES; SIC SUBSTRATES; TEMPERATURE DEPENDENCES;

ATOMS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GADOLINIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC MATERIALS; MAGNETIC RESONANCE; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SUBSTRATES;

RESONANCE;

EID: 54349119168 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200824023 Document Type: Conference Paper

Times cited : (11)

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