Preparation and properties of Ba(Zr0.2Ti0.8)O 3 thin films by chemical solution deposition

Ferroelectrics

Volumn 381, Issue 1 PART 2, 2009, Pages 67-73

  Maiwa, Hiroshi ^a   Ohashi, Kohei ^a   Hayashi, Takashi ^a  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ba(Zr0.2Ti0.8)O3; Chemical solution deposition; Relaxor; Tunability

Indexed keywords

ALKOXIDES; BZT THIN FILMS; CHEMICAL SOLUTION DEPOSITION; ELECTRICAL PROPERTY; FIELD-INDUCED DISPLACEMENT; HIGH PERMITTIVITY; PIEZOELECTRIC COEFFICIENT; PREPARATION AND PROPERTIES; RELAXORS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TUNABILITIES;

BARIUM; CHEMICALS; DEPOSITION; ELECTRIC PROPERTIES; GRAIN GROWTH; PERMITTIVITY; PIEZOELECTRICITY; SUBSTRATES; TEMPERATURE DISTRIBUTION; THIN FILMS; ZIRCONIUM;

FILM PREPARATION;

EID: 77949300920     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902869665     Document Type: Conference Paper

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