Fabrication and characterization of electrodeposited bismuth telluride films and nanowires

Journal of Physical Chemistry C

Volumn 114, Issue 8, 2010, Pages 3385-3389

  Chen, Cheng Lung ^a,b   Chen, Yang Yuan ^b   Lin, Su Jien ^a   Ho, James C ^b   Lee, Ping Chung ^b   Chen, Chii Dong ^a   Harutyunyan, Sergey R ^b,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c INSTITUTE FOR PHYSICAL RESEARCH   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; BISMUTH TELLURIDE; COUPLING TEMPERATURE; CURRENT FLOWS; DIMENSIONAL EFFECTS; EFFECTIVE MEDIUM THEORIES; HEAT-CAPACITY DATA; NANOWIRES ARRAYS; PREFERRED ORIENTATIONS; TEMPERATURE DEPENDENCE; THERMOELECTRIC MATERIAL;

BISMUTH; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; NANOWIRES; TELLURIUM COMPOUNDS; THERMOELECTRICITY;

ELECTRIC WIRE;

EID: 77749274536     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp909926z     Document Type: Article

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