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Volumn 94, Issue 4, 2010, Pages 662-667

Engineering the electronic structure of the ZnPc/C60 heterojunction by temperature treatment

Author keywords

C60; Electronic structure; Interface band bending; Organic semiconductors; photoemission spectroscopy; ZnPc

Indexed keywords

BAND ALIGNMENTS; BANDBENDING; BI-LAYER; CHARGE TRANSPORT; IN-SITU; INTERFACE DIPOLE; ORGANIC HETEROJUNCTIONS; ORGANIC SEMICONDUCTOR; ORGANIC SEMICONDUCTORS; PHOTOEMISSION SPECTROSCOPY; POTENTIAL DISTRIBUTIONS; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; TEMPERATURE CONDITIONS; TEMPERATURE DEPENDENT; TEMPERATURE TREATMENTS; TRANSPARENT CONDUCTIVE;

EID: 77649273416     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.10.022     Document Type: Article
Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.