Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Chinese Physics B

Volumn 19, Issue 2, 2010, Pages

  Xue, Long ^a   Xaing, Li ^a   Peng Ting, Lin ^a   Xing Wang, Cheng ^a   Ying, Liu ^a   Chuan Bao, Cao ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Doping; Photoluminescence; ZnO

Indexed keywords

ANNEALING TEMPERATURES; DEFECT-RELATED EMISSION; MG CONCENTRATIONS; MG-DOPED; MG-DOPING; NEAR BAND EDGE EMISSIONS; SI SUBSTRATES; ZNO;

FULL WIDTH AT HALF MAXIMUM; METALLIC FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 77649263319     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/2/027202     Document Type: Article

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