Constraints on models of electrical transport in optimally doped La 2-x Sr x CuO 4 from measurements of radiation-induced defect resistance

Journal of Superconductivity and Novel Magnetism

Volumn 23, Issue 3, 2010, Pages 339-342

  Clayhold, J A ^a   Pelleg, O ^b   Ingram, D C ^c   Bollinger, A T ^b   Logvenov, G ^b   Rench, D W ^a   Kerns, B M ^a   Schroer, M D ^a   Sundling, R J ^d   Bozovic, I ^b  

^a MIAMI UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c OHIO UNIVERSITY   (United States)

^d ZenSoft Inc   (United States)

Author keywords

Cuprate superconductor; Electrical transport; High temperature superconductor; Ion damage; LSCO; Normal state; Resistivity

Indexed keywords

CUPRATE SUPERCONDUCTOR; DEFECT SCATTERING; ELECTRICAL TRANSPORT; ION DAMAGE; MAGNETOTRANSPORTS; NORMAL STATE RESISTIVITY; PARALLEL CONDUCTANCE; PRECISE MEASUREMENTS; RADIATION INDUCED DEFECTS; SCATTERING PROCESS; TEMPERATURE DEPENDENCE;

COPPER COMPOUNDS; DEFECTS; HIGH TEMPERATURE SUPERCONDUCTORS; SCATTERING;

SUPERCONDUCTIVITY;

EID: 77649231745     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-009-0580-8     Document Type: Article

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