A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM

Design and Nature

Volumn 6, Issue , 2004, Pages 57-60

  Barnard, J S ^a   Vickers, M E ^a   Kappers, M J ^a   Thrush, E J ^b   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Thomas Swan Sci Equipment Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; DARK-FIELD IMAGING; ROCKING CURVES; STATISTICAL VARIATIONS;

COMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SET THEORY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 7744229273     PISSN: 14780585     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. Amali A and Rez P 1997 Microscopy and Microanalysis 3, 28
2. Egerton R F 1996 Electron energy loss spectroscopy in the electron microscope (Plenum)
3. Kothleitner G and Hofer F 1998 Micron 29, 349
4. Thomas P J and Midgley P A 2001 Ultramicroscopy 88, 179
5. Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S and Humphreys C J 2003 J. Appl. Phys. 94, 1565