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Volumn 256, Issue 10, 2010, Pages 3058-3062

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

Author keywords

Electric properties; Electrodeposition; Gallium arsenide; Thin films

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; ELECTRODEPOSITION; ELECTRODES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; POROUS SILICON; SEMICONDUCTING GALLIUM; THIN FILMS; X RAY DIFFRACTION;

EID: 77349085975     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.11.073     Document Type: Article
Times cited : (8)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.