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Volumn 256, Issue 10, 2010, Pages 3058-3062
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Electric characterization of GaAs deposited on porous silicon by electrodeposition technique
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Author keywords
Electric properties; Electrodeposition; Gallium arsenide; Thin films
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Indexed keywords
CAPACITANCE;
ELECTRIC PROPERTIES;
ELECTRODEPOSITION;
ELECTRODES;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
POROUS SILICON;
SEMICONDUCTING GALLIUM;
THIN FILMS;
X RAY DIFFRACTION;
CAPACITANCE-VOLTAGE TECHNIQUES;
CURRENT VOLTAGE;
ELECTRIC CHARACTERIZATION;
ELECTRODEPOSITION TECHNIQUE;
FREQUENCY SIGNALS;
GAAS THIN FILMS;
SCHOTTKY JUNCTIONS;
X-RAY DIFFRACTION STUDIES;
ALUMINUM COMPOUNDS;
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EID: 77349085975
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.11.073 Document Type: Article |
Times cited : (8)
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References (18)
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