Large-area epitaxial graphene: Effect of strain and thickness on electronic properties

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 107-109

  Robinson, Joshua A ^a   Fanton, Mark A ^a   Stitt, Joseph P ^a   Stitt, Thomas ^a   Snyder, David ^a   Frantz, Eric ^a   Tedesco, Joseph L ^b   VanMil, Brenda L ^b   Jernigan, Glenn ^b   Campbell, Paul ^b   Myers Ward, Rachael L ^b   Eddy Jr , Charles R ^b   Gaskill, D Kurt ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONIC PROPERTIES; ELECTRONICS INDUSTRY; GRAPHENE TRANSISTORS; HALL MOBILITY; HOLE MOBILITY; SILICON CARBIDE; TOPOGRAPHY;

EFFECT OF STRAIN; ELECTRONIC QUALITY; EPITAXIAL GRAPHENE; HIGH-SPEED ELECTRONICS; LARGE-AREA GRAPHENE; PRODUCTION SCALE; THICKNESS UNIFORMITY; TRANSISTOR OPERATION;

GRAPHENE;

EID: 77149165455     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119533     Document Type: Conference Paper

References (6)

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