Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 4, 2010, Pages 1200-1204

  Sfigakis, F ^a   Das Gupta, K ^a   Sarkozy, S ^a   Farrer, I ^a   Ritchie, D A ^a   Pepper, M ^a   Jones, G A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

0.7 anomaly; 0.7 structure; Kondo; Zero bias anomaly

Indexed keywords

0.7 STRUCTURE; DEVICE SIZES; DOPED DEVICES; GAAS/ALGAAS HETEROSTRUCTURES; IMPURITY SEPARATION; POLARISATION; QUANTUM WIRES; REPRODUCIBILITIES; ZERO-BIAS; ZERO-BIAS ANOMALY;

CRYSTALS; NANOWIRES; SIZE SEPARATION; WIRE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 76949105333     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.018     Document Type: Article

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