Heavily doped and fully compensated Ge single-crystalline films on GaAs

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Mitin, V F ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

CONDUCTANCE ACTIVATION ENERGY; CRYSTALLINE THIN FILMS; POTENTIAL FLUCTUATIONS; SINGLE CRYSTALLINE FILMS;

THIN FILMS;

EID: 44349148444     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2931704     Document Type: Article

References (14)

1. N. P. Garbar, L. A. Matveeva, V. F. Mitin, Yu. A. Tkhorik, R. Harman, Yu. M. Shvarts, and Z. Stroubek, Sov. Phys. Semicond. 21, 245 (1987).
2. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
3. A. Y. Shik, Electronic Properties of Inhomogeneous Semiconductors (Gordon and Breach, New York, 1995).
4. B. I. Shklovskii, Sov. Phys. Semicond. 7, 77 (1973).
5. B. I. Shklovskii and A. L. Efros, Sov. Phys. JETP 35, 610 (1972).
6. B. I. Shklovskii, Sov. Phys. Semicond. 13, 53 (1979).
7. A. S. Skal, B. I. Shklovskii, and A. L. Efros, Sov. Phys. JETP Lett. 17, 377 (1973).
8. B. I. Shklovskii, Sov. Phys. JETP Lett. 14, 269 (1971).
9. A. S. Skal, B. I. Shklovskii, and A. L. Efros, Sov. Phys. JETP 15, 961 (1973).
10. A. Ya. Shik, Sov. Phys. Semicond. 9, 574 (1975).
11. A. Ya. Shik, Sov. Phys. Semicond. 9, 761 (1975).
12. C. J. Adkins, J. Phys. C 12, 3389 (1979).
13. A. Ya. Shik, Sov. Phys. Semicond. 17, 1422 (1983).
14. M. K. Sheinkman and A. Ya. Shik, Sov. Phys. Semicond. 10, 128 (1976).