Enhancement of negative magnetoresistance due to weak localization in In2 O3 thin films on Si substrate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 4, 2010, Pages 1134-1137

  Fujimoto, A ^a   Kitamura, M ^b   Kobori, H ^b   Yamasaki, A ^b   Sugimura, A ^b   Ando, A ^c   Kawanaka, H ^c   Naitoh, Y ^c   Shimizu, T ^c  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b KONAN UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

In2 O3; Magnetoresistance; Oxygen vacancies; RF magnetron sputtering; Weak localization

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; CONDUCTION ELECTRONS; CRYSTALLINE QUALITY; GLASS SUBSTRATES; IN2 O3; INELASTIC SCATTERING TIME; NEGATIVE MAGNETO-RESISTANCE; RF-MAGNETRON SPUTTERING; SI SUBSTRATES; SI(1 0 0); STRUCTURAL AND ELECTRICAL PROPERTIES; WEAK LOCALIZATION; WEAK LOCALIZATION EFFECTS;

ATOMIC SPECTROSCOPY; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETRONS; OXYGEN; OXYGEN VACANCIES; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76949098415     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.11.083     Document Type: Article

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