Metallic proximity effect in ballistic graphene with resonant scatterers

Semiconductor Science and Technology

Volumn 25, Issue 3, 2010, Pages

  Titov, M ^a   Ostrovsky, P M ^b,c   Gornyi, I V ^b,d  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; DIRAC POINT; DOPED SAMPLE; GRAPHENES; IMPURITY SCATTERING; LOCAL DENSITY OF STATE; METALLIC LEADS; POSITION DEPENDENCE; PROXIMITY EFFECTS; RESONANT SCATTERERS; SAMPLE SIZES;

DOPING (ADDITIVES); GRAPHENE; GRAPHITE;

SCATTERING;

EID: 76849109026     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/3/034007     Document Type: Article

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