High-speed lateral polysilicon photodiode in standard CMOS technology

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 521-524

  Radovanovic S ^a   Annema, A J ^a   Nauta, B ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

STANDARD CMOS TECHNOLOGY;

EID: 70350014431     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256928     Document Type: Conference Paper

References (9)

1. [l] A. Aziz, O. Bonnaud, H. Lhermite and F. Raoult, "Lateral polysilicon pn diode; Current-voltage characteristics simulation between 200K and 400K using a numerical approach/' IEEE Trans, on Electr. Devices, vol 41, pp. 204-211, 1994.
2. The Gigabit Ethernet Standard, IEEE Standard 802. 3z, 1998.
3. S. M. Sze: Physics of semiconductor devices', New-York: Wiley-Interscience, 2-nd edition, p. 81, 1981.
4. Lee, J. W., Kim., D. M., "Analytic time domain characterization of p-i-n photadiodes: effects of drift, diffusion, recombination, and absorption," J. Appl. Phys., vol, 6, pp. 2950-2958, March 1902.
5. McKelvey, J. P. :'Solid-State and Semiconductor Physics'
6. Kim, D. M., Lee, J. W., Dousluoglu, T., Solanki, R. and Qian, P, "High-speed lateral poiysilicon pho(. odiodes,'' Semiconductor Sci. Technology, vol. 9, pp. 1276-1278, 1994.
7. Kamins T. : 'Poiycrystalline silicon for integrated circuits and displays', Boston : Kluwer Academic Publisher'se, 2-nd edition, p. 240, 1998.
8. Diaz, DC, Scho, C. I,., Qi, J, Campbell, J. C. «Si/Si02 resonant cavity photodetector,» Appl. Phys, tetter., vol. 59, pp. 2708-2800, November, 1996.
9. Plummet J., Deal M., Griffin P. : 'Silicon VLSI technology; fun-rlametaJs, practice and modelling', Prentice Hall, p. 560, 2000.