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Volumn 160, Issue 3-4, 2010, Pages 204-209

Macroscopic modeling of spin injection and spin transport in organic semiconductors

Author keywords

Magneto resistance; Organic semiconductors; Spin injection; Spin valves

Indexed keywords

ANALYTICAL MODEL; BIAS DEPENDENCE; CARRIER INJECTION; DEVICE MODELS; DRIFT-DIFFUSION APPROXIMATION; FERROMAGNETIC CONTACTS; FERROMAGNETIC METALLIC; LIMITING PROCESS; LOW CURRENTS; MACROSCOPIC MODELING; NUMERICAL CALCULATION; ORGANIC SEMICONDUCTOR; SIMPLE MODEL; SPACE CHARGES; SPIN DEPENDENT TRANSPORT; SPIN INJECTION; SPIN RELAXATION; SPIN TRANSPORT; SPIN VALVE; SPIN-POLARIZED INJECTION; TUNNEL CONTACTS;

EID: 76349111836     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.05.013     Document Type: Article
Times cited : (9)

References (28)
  • 5
    • 0033514240 scopus 로고    scopus 로고
    • See for example:
    • See for example:. Daughton J. J. Magn. Mater. 192 (1999) 334
    • (1999) J. Magn. Mater. , vol.192 , pp. 334
    • Daughton, J.1
  • 25
    • 76349100573 scopus 로고    scopus 로고
    • presented at SPINOS 2, Salt Lake City, UT, February 2009, and private communication
    • A. Dediu, presented at SPINOS 2, Salt Lake City, UT, February 2009, and private communication.
    • Dediu, A.1
  • 26
    • 76349092270 scopus 로고    scopus 로고
    • A more detailed analysis indicates that the transmissivity of the tunnel barrier increases strongly with increasing bias. This not only enhances the decrease in the effective contact resistances but also may lead to reversals of the sign of R′↑, R′↓ as shown, for example, for the case of spin injection into conventional semiconductors by
    • ↓ as shown, for example, for the case of spin injection into conventional semiconductors by


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.