Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field

International Journal of Solids and Structures

Volumn 46, Issue 3-4, 2009, Pages 716-725

  Kim, Sang Joo ^a   Lee, Chang Hoan ^b  

^a University of Seoul   (South Korea)

^b Korea Institute of Science and Technology Information (KISTI)   (South Korea)

Author keywords

Creep; Domain switching; Electric field; PZT wafer; Tensile stress

Indexed keywords

BEAMS AND GIRDERS; BOUNDARY VALUE PROBLEMS; CREEP; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; SWITCHING; TENSILE STRESS;

COMBINED LOADS; CREEP BEHAVIORS; CREEP EXPERIMENTS; DOMAIN SWITCHING; ELECTRIC DISPLACEMENTS; ELECTRICAL BOUNDARY CONDITIONS; INTERNAL ELECTRIC FIELDS; LINEAR MATERIALS; LOADING ENVIRONMENTS; LONGITUDINAL TENSILE; MATERIAL RESPONSES; PZT WAFER; THICKNESS DIRECTIONS; VARIATIONS OF;

TENSILE STRENGTH;

EID: 58149337337     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2008.09.016     Document Type: Article

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