High temperature electrical conductivity in the Cu solubility limit range in ZnS : Cu

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 489-492

  Lott, K ^a   Raukas, M ^a   Vishnjakov, A ^b   Grebennik, A ^b  

^a TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^b MENDELEEV UNIVERSITY OF CHEMICAL TECHNOLOGY OF RUSSIA   (Russian Federation)

Author keywords

Chemical solubility limit; Cu doped ZnS; Defect equilibria; High temperature electrical conductivity

Indexed keywords

COPPER; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE EFFECTS; ISOTHERMS; PHASE EQUILIBRIA; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SOLUBILITY; VAPOR PRESSURE; ZINC SULFIDE;

CHEMICAL SOLUBILITY LIMIT;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033514250     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00792-1     Document Type: Article

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