Mid-IR random lasing of Cr-doped ZnS nanocrystals

Journal of Optics A: Pure and Applied Optics

Volumn 12, Issue 2, 2010, Pages

  Martyshkin, D V ^a   Fedorov, V V ^a   Kim, C ^a   Moskalev, I S ^a   Mirov, S B ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

II VI semiconductors; Random lasers; Transition metal

Indexed keywords

CR-DOPED; DOPED NANOCRYSTALS; GRAIN SIZE; II-VI SEMICONDUCTOR; INTRA-SHELL TRANSITION; LASING SPECTRUM; METAL-DOPED; RANDOM LASERS; RANDOM LASING; ROOM TEMPERATURE; SEMICONDUCTOR NANOCRYSTALS; SPECTRAL RANGE; TEMPERATURE DEPENDENCE;

ABLATION; CHROMIUM; LASER BEAMS; NANOCRYSTALS; TRANSITION METALS; ZINC SULFIDE; II-VI SEMICONDUCTORS; LASER ABLATION; SEMICONDUCTOR LASERS; TEMPERATURE DISTRIBUTION; WIDE BAND GAP SEMICONDUCTORS;

SEMICONDUCTOR LASERS; CHROMIUM COMPOUNDS;

EID: 75849163548     PISSN: 14644258     EISSN: 17413567     Source Type: Journal    
DOI: 10.1088/2040-8978/12/2/024005     Document Type: Article

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